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Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

机译：通过导向的自组织各向异性应变工程在浅和深图案的GaAs（311）B衬底上复杂的横向排列的InGaAs和InAs量子点

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Selçuk, E Ekber; Hamhuis, GJ Rian; Nötzel, R Richard;
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年度 2007
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1. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311 )B substrates [J] . E. Selguk, G. J. Hamhuis, R. Noetzel Journal of Applied Physics . 2007,第9期

机译：通过导向的自组织各向异性应变工程在浅和深图案的GaAs（311）B衬底上形成复杂的横向有序InGaAs和InAs量子点
2. Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (311)B substrates [J] . Selcuk E, Hamhuis GJ, Notzel R Materials science in semiconductor processing . 2009,第1a2期

机译：通过引导自组织各向异性应变工程在人工图案化的GaAs（311）B衬底上形成复杂的横向有序InGaAs和InAs量子点
3. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal [J] . N. Sritirawisarn, F. W. M. van Otten, T. J. Eijkemans, Applied Physicsletters . 2008,第13期

机译：通过自组织各向异性应变工程在InGaAsP / InP（100）上进行波长控制的多层堆叠线性InAs量子点阵列：自排序量子点晶体
4. Probing the properties of self-organized InGaAs quantum dots on GaAs (311)B and (001) by conductive atomic force microscope tip [C] . Yoshitaka Okada, Kouichi Akahane, Yoshimasa Iuchi, Symposium on Semiconductor Quantum Dots . 2001

机译：通过导电原子力显微镜尖端探测GaAs（311）B和（001）的自组织IngaAs量子点的性质
5. Coherent Spectroscopy of InGaAs Quantum Dots =Koh?rente Spektroskopie an InGaAs Quantenpunkten [D] . Strau?, Stefan Maximilian. 2018

机译：Igaas量子点的相干壮观= koh？怨恨不同的区别和Ingaas Pollarts
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering : a self-ordered quantum dot crystal [O] . Sritirawisarn, N Nut, Otten, van, FWM Frank, Eijkemans, TJ Tom, 2008

机译：通过自组织各向异性应变工程在InGaAsP / InP（100）上的波长控制的多层堆叠线性InAs量子点阵列：自排序量子点晶体
8. Photoluminescence Decay Time Measurements from Self-Organized InAs/GaAs Quantum Dots Grown on Misoriented Substrates. [R] . Shkolnik, A. S., Dogonkin, E. B., Evtikhiev, V. P., 2001

机译：在错误定向衬底上生长的自组织Inas / Gaas量子点的光致发光衰减时间测量。

Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on shallow- and deep-patterned GaAs (311)B substrates

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